A novel heterostructure was composed by a multiferroic BiFeO3 layer and a full-heusler Co2FeAl0.5Si0.5 layer.
Ferroelectric characterizes was confirmed in the multiferroic/full-heusler BFO/CFAS heterostructure.
The exchange bias exhibits a fluctuation correlated with cyclical periods of 60 nm as BFO layer is less than 120 nm.
The BFO/CFAS heterostructures have a potential application for future spintronic informational devices.