Suppression of optical field leakage to GaN substrate in GaN-based green laser diode

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• 作者：Feng Liang^a ; Degang Zhao^a ; ^b ; ^{dgzhao@red.semi.ac.cn} ; Desheng Jiang^a ; Zongshun Liu^a ; Jianjun Zhu^a ; Ping Chen^a ; Jing Yang^a ; Wei Liu^a ; Xiang Li^a ; Shuangtao Liu^a ; Yao Xing^a ; Liqun Zhang^c ; Heng Long^d ; Jian Zhang^d
• 关键词：GaN-based green LD ; Optical field leakage
• 刊名：Superlattices and Microstructures
• 出版年：2017
• 出版时间：February 2017
• 年：2017
• 卷：102
• 期：Complete
• 页码：484-489
• 全文大小：1452 K
• 卷排序：102

文摘

Optical field leakage has been suppressed significantly. Optical confinement is enhanced by N-In0.08Ga0.92N LWG and u-In0.02Ga0.98N. Threshold current and output power is also improved dramatically.