Solution-processed natural gelatin was used as a gate dielectric for the fabrication of oxide field-effect transistors
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- 作者：Yinke Hea ; b ; Jia Suna ; jiasun@csu.edu.cn" class="auth_mail" title="E-mail the corresponding author ; Chuan Qiana ; Ling-an Konga ; Jie Jianga ; Junliang Yanga ; Hongjian Lib ; lihj398@csu.edu.cn" class="auth_mail" title="E-mail the corresponding author ; Yongli Gaoa ; c
- 关键词：Biopolymers ; Gelatin electrolyte ; Electric-double-layer ; Oxide transistors
- 刊名：Organic Electronics
- 出版年：2016
- 出版时间：November 2016
- 年：2016
- 卷：38
- 期：Complete
- 页码：357-361
- 全文大小：1033 K
文摘
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Solution-processed natural gelatin electrolyte was used as a gate dielectric for the fabrication of oxide field-effect transistors.
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A high electric-double-layer capacitance larger than 0.93 µF/cm2 was obtained in gelatin processed at low concentrations.
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The gelatin electrolyte gated FETs showed excellent electrical performances.