Electrical characterization and modeling of pulse-based forming techniques in RRAM arrays
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- 作者：Alessandro Grossi ; alessandro.grossi@unife.it" class="auth_mail" title="E-mail the corresponding author ; Cristian Zambelli ; Piero Olivo ; Enrique Miranda1 ; Valeriy Stikanov2 ; Christian Walczyk3 ; Christian Wenger3
- 关键词：RRAM array ; Forming ; Read window ; Energy saving
- 刊名：Solid State Electronics
- 出版年：2016
- 出版时间：January 2016
- 年：2016
- 卷：115
- 期：part_PA
- 页码：17-25
- 全文大小：1512 K
文摘
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We compare different pulse-based forming techniques on 4 kbits RRAM arrays.
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We performed post-forming modeling during Reset operation.
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An Incremental Form and Verify technique (IFV) shown the best results.
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This technique narrows the read current distribution, reducing the switching voltage.
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This allows reducing cell-to-cell variability, switching time and energy.