Effect of substrate bias voltage and substrate temperature on the physical properties of dc magnetron sputtered SnO₂ thin films

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• 作者：Tekuru Prathyusha^a ; Thotapalli Srikanth^a ; Akepati Sivasankar Reddy^a ; ^{akepati77@gmail.com" class="auth_mail" title="E-mail the corresponding author} ; Pamanji Sreedhara Reddy^b ; Ch. Seshendra Reddy^c
• 关键词：Sputtering ; Bias effect ; Substrate temperature ; Tin oxide ; Thin films
• 刊名：Optik - International Journal for Light and Electron Optics
• 出版年：2016
• 出版时间：October 2016
• 年：2016
• 卷：127
• 期：20
• 页码：9457-9463
• 全文大小：1344 K

文摘

Tin oxide (SnO₂) thin films have been prepared by dc reactive magnetron sputtering on glass substrates at different substrate bias voltages and substrate temperatures. The intensity of the peaks and polycrystalline nature of the films are increases with increasing the substrate bias voltage and substrate temperature. From the electron probe micro analysis results, the films deposited at substrate temperature of 473 K was nearly stoichiometry and the atomic percentage of Sn/O ratio was 0.52. From the PL spectra, the emission peak intensity increases with substrate bias voltages and substrate temperatures. The films deposited at substrate bias voltages of −100 V exhibited optical band gap of 3.67 eV with electrical resistivity of 0.5 Ωcm. The films deposited at substrate temperature of 573 K shows the low electrical resistivity of 0.008 Ωcm.