Effect of microwave radiation on the properties of Ta₂O₅–Si microstructures

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• 作者：Atanassova ; E. ; Konakova ; R.V. ; Mitin ; V.F. ; Koprinarova ; J. ; Lytvym ; O.S. ; Okhrimenko ; O.B. ; et. al.
• 刊名：Microelectronics Reliability
• 出版年：2005
• 出版时间：January, 2005
• 年：2005
• 卷：45
• 期：1
• 页码：123-135
• 全文大小：511 K

文摘

The paper presents results of the effect of microwave irradiation at room temperature on the properties of thin layers of tantalum pentoxide deposited on Si by rf sputtering. Electrical characterization is performed in conjunction with Auger electron spectroscopy and atomic force microscopy. Among exposure times used (1; 5; 10 s), treatment of about 5 s shows the best promise as an annealing step––an improvement of number of parameters of the system Ta₂O₅–Si is established (dielectric constant and surface morphology; stoichiometry and microstructure of both the bulk oxide and the interfacial transition region; electrical characteristics in terms of oxide charge density, leakage current and breakdown fields). At the same time the microwave irradiation is not accompanied by crystalization effects in Ta₂O₅ and/or additional oxidation of Si substrate. It is concluded that the short-time microwave irradiation can be used as an annealing process for Ta₂O₅–Si microstructures and it has a potential to replace the high-temperature annealing processes for high-k insulators.