Deep level defects in N-rich and In-rich In_xGa_1−XN: in composition dependence

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• 作者：Emre Gü ; r^a ; ^{emregur@atauni.edu.tr} ; Fatih Akyol^b ; Sriram Krishnamoorthy^b ; Siddharth Rajan^b ; Steven A. Ringel^b
• 关键词：InGaN ; Schottky diode ; Deep level optical spectroscopy (DLOS)
• 刊名：Superlattices and Microstructures
• 出版年：2016
• 出版时间：November 2016
• 年：2016
• 卷：99
• 期：Complete
• 页码：67-71
• 全文大小：455 K
• 卷排序：99

文摘

Effects of decreasing growth temperature on the deep level defects in InxGa1-xN. Schottky device performances for different In content InxGa1-xN. Application of Deep Level Optical Spectroscopy (DLOS) on InxGa1-xN semiconductors. Deep level defects in In-rich and N-rich InxGa1-xN.