On the correlation of growth, structural and electrical properties of epitaxial Ge grown on Si by solid source molecular beam epitaxy

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• 作者：Sudipta Das^a ; Krista R. Khiangte^b ; Rajveer S. Fandan^a ; Jaswant S. Rathore^b ; Ravindra S. Pokharia^a ; Suddhasatta Mahapatra^b ; Apurba Laha^a ; ^{laha@ee.iitb.ac.in}
• 关键词：Epitaxial Ge ; MBE ; CMOS ; Photodetector
• 刊名：Current Applied Physics
• 出版年：2017
• 出版时间：March 2017
• 年：2017
• 卷：17
• 期：3
• 页码：327-332
• 全文大小：1736 K
• 卷排序：17

文摘

Epitaxial Ge grown on Si by solid source molecular beam epitaxy exhibits excellent structural and electrical properties. MOS capacitors fabricated with HfO2 as oxide on epi-Ge demonstrate promising dielectric properties. Very low dark leakage current measured on metal-semiconductor-metal (MSM) back to back Schottky diode fabricated on epi-Ge layer.