Microstructures and optoelectronic properties of CuxO films deposited by high-power impulse magnetron sputtering
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- 作者：Hui Suna ; hui.sun@utbm.fr" class="auth_mail" title="E-mail the corresponding author ; Chao-Kuang Wenb ; d04527007@ntu.edu.tw" class="auth_mail" title="E-mail the corresponding author ; Sheng-Chi Chenc ; d ; chensc@mail.mcut.edu.tw" class="auth_mail" title="E-mail the corresponding author ; Tung-Han Chuangb ; tunghan@ntu.edu.tw" class="auth_mail" title="E-mail the corresponding author ; Mohammad Arab Pour Yazdia ; mohammad.arab-pour-yazdi@utbm.fr" class="auth_mail" title="E-mail the corresponding author ; Frederic Sanchettee ; f ; frederic.sanchette@utt.fr" class="auth_mail" title="E-mail the corresponding author ; Alain Billarda ; g ; alain.billard@utbm.fr" class="auth_mail" title="E-mail the corresponding author
- 关键词：Cu2O thin film ; High-power impulse magnetron sputtering ; Optoelectronic properties ; Oxygen flow ratio
- 刊名：Journal of Alloys and Compounds
- 出版年：2016
- 出版时间：15 December 2016
- 年：2016
- 卷：688
- 期：part_PB
- 页码：672-678
- 全文大小：1927 K
文摘
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p-type Cu2O thin films were prepared by HiPIMS from Cu metallic targets.
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The influence of oxygen flow ratio on films optoelectronic properties was studied.
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The optimal p-type conductivity of about 0.4 S × cm−1 is achieved.