Electromigration behavior of advanced metallization on the structural effects for memory devices
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- 作者：Kyung-Tae Jang ; Yong-Jin Park ; Min-Woo Jeong ; Seung-Min Lim ; Han-Wool Yeon ; Ju-Young Cho ; Min-Gi Jin ; Jin-Sub Shin1 ; Byoung-Wook Woo1 ; Jang-Yong Bae1 ; Yu-Chul Hwang1 ; Young-Chang Joo ; ycjoo@snu.ac.kr" class="auth_mail" title="E-mail the corresponding author
- 关键词：Electromigration ; Memory interconnect ; Multiple structure ; Feeding material ; Pulsed DC
- 刊名：Microelectronic Engineering
- 出版年：2016
- 出版时间：20 April 2016
- 年：2016
- 卷：156
- 期：Complete
- 页码：97-102
- 全文大小：1056 K
文摘
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EM behaviors depend on not only metal materials but also the structure of the interconnects.
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The Cu line fed with a W contact has a shorter lifetime than that of Cu fed with a Cu contact.
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Mean time-to-failure for Cu interconnects can be enhanced under AC and pulsed DC.
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Mean time-to-failure for Cu interconnects was independent of the frequency of the pulsed DC.
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Mean time-to-failure for Cu interconnects increased with the off-time period.