Simultaneous multilayer formation of the polymer solar cell stack using roll-to-roll double slot-die coating from water

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• 作者：Thue T. Larsen-Olsen ; Birgitta Andreasen ; Thomas R. Andersen ; Arvid P.L. Bö ; ttiger ; Eva Bundgaard ; Kion Norrman ; Jens W. Andreasen ; Mikkel Jø ; rgensen ; Frederik C. Krebs ; ^{frkr@risoe.dtu.dk}
• 关键词：Double slot-die coating ; Organic solar cells ; Roll-to-roll coating polymer solar cells ; Simultaneous multilayer formation ; Slot-die coating
• 刊名：Solar Energy Materials and Solar Cells
• 出版年：2012
• 出版时间：February, 2012
• 年：2012
• 卷：97
• 期：Complete
• 页码：22-27
• 全文大小：650 K

文摘

Double slot-die coating using aqueous inks was employed for the simultaneous coating of the active layer and the hole transport layer (HTL) in fully roll-to-roll (R2R) processed polymer solar cells. The double layer film was coated directly onto an electron transport layer (ETL) comprising doped zinc oxide that was processed by single slot-die coating from water. The active layer comprised poly-3-hexylthiophene:Phenyl-C₆₁-butyric acid methyl ester (P3HT:PCBM) as a dispersion of nanoparticles with a radius of 46 nm in water characterized using small-angle X-ray scattering (SAXS), transmission electron microscopy (TEM), and atomic force microscopy (AFM). The HTL was a dispersion of poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate) (PEDOT:PSS) in water. The films were analyzed using time-of-flight secondary ion mass spectrometry (TOF-SIMS) as chemical probe and X-ray reflectometry as physical probe, confirming the identity of the layered structure. The devices were completed with a back electrode of either Cu tape or evaporated Ag. Under standard solar spectrum irradiation (AM1.5G), current-voltage characterization (J-V) yielded an open-circuit voltage (V_oc), short-circuit current (J_sc), fill factor (FF), and power conversion efficiency (PCE) of 0.24 V, 0.5 mA cm^?, 25 % , and 0.03 % , respectively, for the best double slot-die coated cell. A single slot-die coated cell using the same aqueous inks and device architecture yielded a V_oc, J_sc, FF, and PCE of 0.45 V, 1.95 mA cm^?, 33.1 % , and 0.29 % , respectively.