Gate leakage currents induced by thermal fluctuation on two-dimensional electron gas in AlGaN/GaN high-electron-mobility transistors

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• 作者：Jian Peng^a ; Xiwen Liu^a ; Dong Ji^b ; Yanwu Lu^a ; ^{ywlu@bjtu.edu.cn}
• 关键词：Nitride semiconductor ; Heterostructure ; Two-dimensional electron gas ; Leakage current
• 刊名：Thin Solid Films
• 出版年：2017
• 出版时间：1 February 2017
• 年：2017
• 卷：623
• 期：Complete
• 页码：98-101
• 全文大小：397 K
• 卷排序：623

文摘

The leakage current induced by thermal fluctuation in AlGaN/GaN is studied. Leakage current is enhanced by the increase of the 2DEG density at low voltages. Leakage current at room temperature is order of 10− 2 to 10− 1 A/cm2 at low voltages. Results show that thermal fluctuation is a basic mechanism in AlGaN/GaN.