The quantum efficiency of InAs/GaSb T2SL VLWIR photodetectors with 50% cutoff of 12.7 μm was investigated.
The minority-carrier diffusion length was determined as the key element to improve the QE of VLWIR T2SL photodetectors.
The short hole diffusion length and the large ratio to the width are against the photo-excited carrier collection.
© 2004-2018 中国地质图书馆版权所有 京ICP备05064691号 京公网安备11010802017129号 地址:北京市海淀区学院路29号 邮编:100083 电话:办公室:(+86 10)66554848;文献借阅、咨询服务、科技查新:66554700 |