Rapid thermal annealing effect on the spatial resistivity distribution of AZO thin films deposited by pulsed-direct-current sputtering for solar cells applications
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- 作者：Boubakeur Ayachia ; boubakeur.ayachi@ed.univ-lille1.fr" class="auth_mail" title="E-mail the corresponding author ; Thomas Avilesb ; Jean-Pierre Vilcota ; Cathy Siona ; c
- 关键词：AZO thin films ; Pulsed-DC magnetron sputtering ; Rapid thermal annealing ; Spatial resistivity distribution ; CIGS solar cells
- 刊名：Applied Surface Science
- 出版年：2016
- 出版时间：15 March 2016
- 年：2016
- 卷：366
- 期：Complete
- 页码：53-58
- 全文大小：1191 K
文摘
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High quality pulsed-DC sputtered AZO thin films were obtained after RTA treatment.
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RTA for 30 s was sufficient to achieve uniform spatial resistivity distribution.
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RTA for longer than 1 min showed a small increase in resistivity value.
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Such improvement was attributed to grain boundaries passivation and doping activation.
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In the framework of low cost solar cells development, RTA process would be helpful.
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