Investigation of rapid degradation in GaN-based blue laser diodes

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• 作者：Pengyan Wen^a ; ^b ; Shuming Zhang^a ; ^b ; ^{smzhang2010@sinano.ac.cn} ; Deyao Li^a ; ^b ; Jianping Liu^a ; ^b ; Liqun Zhang^a ; ^b ; Dong Shi^c ; Kun Zhou^a ; ^b ; Aiqin Tian^a ; ^b ; Shiwei Feng^c ; Hui Yang^a ; ^b
• 关键词：GaN-based laser diode ; Rapid degradation ; Thermal characteristic ; Temperature distribution ; Electrical characteristic ; Microstructure
• 刊名：Superlattices and Microstructures
• 出版年：2016
• 出版时间：November 2016
• 年：2016
• 卷：99
• 期：Complete
• 页码：72-76
• 全文大小：1744 K
• 卷排序：99

文摘

Investigation of the degradation modes in GaN-based blue laser diodes grown by metal organic chemical vapor deposition (MOCVD) is carried out. Early failure of the LDs happened at the initial stage of the aging. After analysis of the electrical and thermal characteristics, local degradation of the active region is observed. Further investigation on the microstructures of the local regions shows that the early failure of the LDs is due to the local structure damage with the formation of gallium metal.