Fabrication and electrical properties of metal-oxide semiconductor capacitors based on polycrystalline p-Cu_xO and HfO₂/SiO₂ high-κ stack gate dielectrics

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• 作者：Xiao Zou ; Guojia Fang ; Longyan Yuan ; Nishuang Liu ; Hao Long ; Xingzhong Zhao
• 关键词：Metal-oxide-semiconductor capacitor ; Pulsed laser deposition ; Copper oxide ; Hafmium dioxide ; Annealing ; X-ray diffraction ; X-ray photoelectron spectroscopy
• 刊名：Thin Solid Films
• 出版年：2010
• 出版时间：31 May 2010
• 年：2010
• 卷：518
• 期：15
• 页码：4446-4449
• 全文大小：550 K

文摘

Polycrystalline p-type Cu_xO films were deposited after the growth of HfO₂ dielectric on Si substrate by pulsed laser deposition, and Cu_xO metal-oxide-semiconductor (MOS) capacitors with HfO₂/SiO₂ stack gate dielectric were primarily fabricated and investigated. X-ray diffraction and X-ray photoelectron spectroscopy were applied to analyze crystalline structure and Cu⁺/Cu²⁺ ratios of Cu_xO films respectively. SiO₂ interlayer formed between the high-κ dielectric and substrate was estimated by the transmission electron microscope. Results of electrical characteristic measurement indicate that the permittivity of HfO₂ is about 22, and the gate leakage current density of MOS capacitor with 11.3 nm HfO₂/SiO₂ stack dielectrics is  10⁻⁴ A/cm². Results also show that the annealing in N₂ can improve the quality of Cu_xO/HfO₂ interface and thus reduce the gate leakage density.