Influence of excitonic effects on luminescence quantum yield in silicon

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• 作者：A.V. Sachenko^a ; V.P. Kostylyov^a ; V.M. Vlasiuk^a ; I.O. Sokolovskyi^a ; ^b ; ^{isokolovskyi@mun.ca} ; M. Evstigneev^b
• 关键词：Silicon ; Excitons ; Luminescence ; Quantum yield ; Recombination
• 刊名：Journal of Luminescence
• 出版年：2017
• 出版时间：March 2017
• 年：2017
• 卷：183
• 期：Complete
• 页码：299-302
• 全文大小：501 K
• 卷排序：183

文摘

Nonradiative exciton lifetime in silicon is determined by comparison of the experimental and theoretical curves of bulk minority charge carriers lifetime on doping and excitation levels. This value is used to analyze the influence of excitonic effects on internal luminescence quantum yield at room temperature, taking into account both nonradiative and radiative exciton lifetimes. A range of Shockley-Hall-Reed lifetimes is found, where excitonic effects lead to an increase of internal luminescence quantum yield.