Influence of point defects on optical properties of GaN-based materials by first principle study

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• 作者：Linsen Li ; Jiadong Yu ; Zhibiao Hao ; ^{zbhao@tsinghua.edu.cn} ; Lai Wang ; Jian Wang ; Yanjun Han ; Hongtao Li ; Bing Xiong ; Changzheng Sun ; Yi Luo ; ^{luoy@tsinghua.edu.cn}
• 关键词：GaN-based materials ; Point defects ; First principle ; Exciton ; Yellow luminescence
• 刊名：Computational Materials Science
• 出版年：2017
• 出版时间：March 2017
• 年：2017
• 卷：129
• 期：Complete
• 页码：49-54
• 全文大小：2333 K
• 卷排序：129

文摘

The influence of point defects on the energy band of GaN-based materials. The reason of high luminous efficiency in GaN-based materials even with high vacancies density. The origin of yellow luminescence in GaN-based materials.