Contactless electroreflectance studies of the Fermi level position at the air/GaN interface: Bistable nature of the Ga-polar surface

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• 作者：Łukasz Janicki^a ; ^{lukasz.janicki@pwr.edu.pl} ; Marta Gładysiewicz^a ; Jan Misiewicz^a ; Kamil Klosek^b ; Marta Sobanska^b ; Paweł Kempisty^c ; Zbigniew R. Zytkiewicz^b ; Robert Kudrawiec^a ; ^b ; ^{robert.kudrawiec@pwr.edu.pl}
• 关键词：Gallium nitride ; Fermi level ; Surface potential ; Contactless electroreflectance
• 刊名：Applied Surface Science
• 出版年：2017
• 出版时间：28 February 2017
• 年：2017
• 卷：396
• 期：Complete
• 页码：1657-1666
• 全文大小：2211 K
• 卷排序：396

文摘

Optical spectroscopy is performed on specially-designed UD+ GaN samples. A change in CER signal direction reveals different band bending in Si-doped and Mg-doped samples. The position of the surface Fermi level (below the CB) is established: 0.6 eV for Si doped and ∼1.7 eV for Mg doped samples. DFT calculations confirm the bistability of the surface Fermi level of GaN(0001).