Cleaning methodology of small residue defect with surfactant in copper chemical mechanical polishing post-cleaning
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- 作者：Kuo-Hsiu Weia ; Chi-Cheng Hungb ; Yu-Sheng Wangb ; Chuan-Pu Liua ; Kei-Wei Chenc ; Ying-Lang Wangd ; ylwang@tsmc.com" class="auth_mail" title="E-mail the corresponding author
- 关键词：Abrasive ; Copper ; Chemical mechanical polishing ; Post-cleaning ; Tetramethylammonium hydroxide (TMAH) ; Citric acid ; Perfluorobutanesulfonic acid (PFBS)
- 刊名：Thin Solid Films
- 出版年：2016
- 出版时间：1 November 2016
- 年：2016
- 卷：618
- 期：part_PA
- 页码：77-80
- 全文大小：922 K
文摘
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Small residues with surfactant are found after copper chemical mechanical polishing.
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Small residues removal is insufficient using traditional process parameter tuning.
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Introducing friction by re-polishing is an effective way to remove small residues.