A model describing the pressure dependence of the band gap energy for the group III-V semiconductors

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• 作者：Chuan-Zhen Zhao^a ; ^{as3262001@aliyun.com" class="auth_mail" title="E-mail the corresponding author} ; Tong Wei^b ; Xiao-Dong Sun^a ; Sha-Sha Wang^a ; Ke-Qing Lu^a
• 关键词：III&ndash ; V semiconductor ; Pressure dependence ; Band gap energy
• 刊名：Physica B: Physics of Condensed Matter
• 出版年：2016
• 出版时间：1 August 2016
• 年：2016
• 卷：494
• 期：Complete
• 页码：71-74
• 全文大小：554 K

文摘

A model describing the pressure dependence of the band gap energy for the group III–V semiconductors has been developed. It is found that the model describes the pressure dependence of the band gap energy very well. It is also found that, although the pressure dependence of the band gap energy for both the conventional III–V semiconductors and the dilute nitride alloys can be described well by the model in this work, the physical mechanisms for them are different. In addition, the influence of the nonlinear compression of the lattice on the band gap energy is smaller than that of the coupling interaction between the N level and the conduction band minimum of the host material.