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In situ Ni-doping during cathodic electrodeposition of hematite for excellent photoelectrochemical performance of nanostructured nickel oxide-hematite p-n junction photoanode
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文摘

NiO-hematite p-n junction photoanodes were fabricated via an in situ Ni-doping.

The fundamental mechanism of Ni2+ ions involved was elucidated.

The optimum Ni dopant was 25 M% for the highest photocurrent density.

It exhibited an excellent photoelectrochemical performance of 7-folds enhancement.

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