A novel 4H-SiC MESFET with double upper gate and recessed p-buffer
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- 作者：Hujun Jia ; Peimiao Ma ; miks1991@163.com" class="auth_mail" title="E-mail the corresponding author ; Yehui Luo ; Zhihui Yang ; Zhijiao Wang ; Qiuyuan Wu ; Mei Hu
- 关键词：4H-SiC MESFET ; Double upper gate ; Recessed p-buffer ; Drain current ; Gate-source capacitance
- 刊名：Superlattices and Microstructures
- 出版年：2016
- 出版时间：September 2016
- 年：2016
- 卷：97
- 期：Complete
- 页码：346-352
- 全文大小：1450 K
文摘
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A novel 4H-SiC structure named DURP MESFET is proposed.
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A double upper gate and a recessed p-buffer are employed in the DURP MESFET.
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DC and RF characteristics are simulated.
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Compared with DR MESFET, DURP MESFET obtains higher drain current and breakdown voltage.
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An evident decrease in gate-source capacitance of DURP MESFET is achieved.