Improving thermoelectric performance of p-type Ag-doped Mg₂Si_0.4Sn_0.6 prepared by unique melt spinning method

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• 作者：Xiaodan Tang^a ; ^b ; Yumeng Zhang^a ; Yong Zheng^a ; Kunling Peng^a ; ^b ; Tianyu Huang^b ; Xu Lu^a ; Guoyu Wang^b ; Shuxia Wang^a ; ^{wangshuxia@cqu.edu.cn} ; Xiaoyuan Zhou^a ; ^{xiaoyuan2013@cqu.edu.cn}
• 关键词：p-type Mg2Si0.4Sn0.6 ; Melt spinning ; Thermoelectric properties
• 刊名：Applied Thermal Engineering
• 出版年：2017
• 出版时间：25 January 2017
• 年：2017
• 卷：111
• 期：Complete
• 页码：1396-1400
• 全文大小：1149 K
• 卷排序：111

文摘

In our work, p-type Mg2−xAgxSi0.4Sn0.6 (x = 0.00, 0.01, 0.02, 0.05, 0.07) compounds with single-phase are successfully synthesized via a home-made melt spinning (MS) system followed by spark plasma sintering (SPS). This unique process not only largely shortens the time of sample preparation compared with the traditional methods, but also successfully prevents the presence of MgO impurity phase. All samples are single-phase solid solutions with an anti-fluorite structure as identified by XRD. The thermoelectric properties of Mg2−xAgxSi0.4Sn0.6 compounds were measured from room temperature to 773 K. The final results indicate that (1) Ag serves as effective holes donor and (2) the electrical conductivity rises rapidly and the thermal conductivity decreases with increasing Ag content until x = 0.05. As a result, a peak dimensionless figure of merit ZT value of 0.45 at 690 K is achieved when x = 0.05. The enhanced thermoelectric performance coupled with the drastically reduced processing time will be of considerable significance to the commercial-scale production of Mg2X (X = Si, Ge, and Sn) thermoelectric material.