Uniformly strained AlGaSb/InGaSb/AlGaSb quantum well on GaAs substrates for balanced complementary metal-oxide-semiconductors

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• 作者：Il Pyo Roh^a ; ^b ; ¹ ; Sang Hyeon Kim^b ; ¹ ; Yun Heub Song^a ; ^{yhsong2008@hanyang.ac.kr} ; Jin Dong Song^b ; ^{jdsong@kist.re.kr}
• 关键词：InGaSb ; Balanced CMOS ; High mobility ; Strain
• 刊名：Current Applied Physics
• 出版年：2017
• 出版时间：March 2017
• 年：2017
• 卷：17
• 期：3
• 页码：417-421
• 全文大小：1211 K
• 卷排序：17

文摘

We designed and fabricated an Al0.9Ga0.1Sb/In0.4Ga0.6Sb/Al0.9Ga0.1Sb quantum well (QW) with a balanced band offset for channel materials in future complementary metal-oxide-semiconductor (CMOS) circuits. The QW design was carried out by one-dimensional Schrodinger–Poisson equation system. The QW was grown by molecular beam epitaxy and the crystallinity and the surface morphology were characterized using a transmission electron microscope (TEM) and atomic force microscope (AFM), respectively. The results showed good crystalline behaviors and morphologies without any identifiable morphological defects. Furthermore, we investigated the strain characteristics in In0.4Ga0.6Sb by measuring the Raman shift. We found that In0.4Ga0.6Sb has high compressive strain of 1.74% and the strain distribution was uniform.