Characteristics of low doped gallium-zinc oxide thin film transistors and effect of annealing under high vacuum
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- 作者：Ved Prakash Verma ; Do-Hyun Kim ; Hoonha Jeon ; Minhyon Jeon ; Wonbong Choi
- 关键词：Zinc oxide ; Zinc oxide ; metal ; Thin film transistor ; X-ray diffraction ; Electrical measurements and properties
- 刊名：Thin Solid Films
- 出版年：2008
- 出版时间：1 October 2008
- 年：2008
- 卷：516
- 期：23
- 页码：8736-8739
- 全文大小：698 K
文摘
We report on the fabrication and electrical characteristics of thin film transistors (TFTs) based on low Ga-doped zinc oxide (GZO). Low Ga-doped (1 wt. % ) ZnO thin films deposited as an active channel by radio frequency magnetron sputtering at room temperature exhibit a high transmittance (> 80 % ). The devices show a mobility of ~ 5.7 cm2/Vs at low operation voltage of < 5 V and a low turn-on voltage of ~ 0.5 V with a subthreshold swing of ~ 85 mV/decade. The TFT device performance is significantly affected by vacuum-level and annealing treatment, which is attributed to the chemisorption/desorption of oxygen from the surface of active channel. Low doped GZO is a type of TFT channel material that has potential for high performance, multi-functionality and easy-process.