Simulation of carbon nanotube FETs with linear doping profile near the source and drain contacts

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• 作者：Iman Hassaninia ; Mohammad Hossein Sheikhi ; Zoheir Kordrostami
• 关键词：Carbon nanotube ; Ambipolarity ; Band to band tunneling ; Doping profile
• 刊名：Solid-State Electronics
• 出版年：2008
• 出版时间：June 2008
• 年：2008
• 卷：52
• 期：6
• 页码：980-985
• 全文大小：431 K

文摘

We propose carbon nanotube field effect transistors (CNTFETs) in which the source and drain regions of the channel (carbon nanotube) have been doped nonuniformly. The MOSFET like CNTFETs (MOSCNTs) suffer from band to band tunneling which in turn causes the ambipolar conduction. In this paper, we propose a linear doping profile for the carbon nanotube (CNT) near the source and drain contacts. This reduces the gradient of each potential barrier at the interface between the intrinsic and doped parts of the CNT and suppresses the band to band tunneling and ambipolar conduction. The device has been simulated by solving coupled Poisson and Schrödinger equations. Non-equilibrium Green’s function (NEGF) method has been used to investigate the transport properties. The uncoupled mode space approach has been used to reduce the computational burden. The calculated energy band diagrams justified improved ambipolar behavior and lower off current.