Synthesis, crystal growth and mechanical properties of Bismuth Silicon Oxide (BSO) single crystal

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• 作者：B. Riscob ; Mohd. Shkir ; V. Ganesh ; N. Vijayan ; K.K. Maurya ; K. Kishan Rao ; G. Bhagavannarayana
• 关键词：Crystal growth ; X-ray diffraction ; Mechanical properties
• 刊名：Journal of Alloys and Compounds
• 出版年：5 March, 2014
• 年：2014
• 卷：588
• 期：Complete
• 页码：242-247
• 全文大小：1753 K

文摘

Bismuth Silicon Oxide (BSO) is an efficient material for piezo-electric and electro-optic applications. In this article, growth of BSO single crystal by high temperature Czochralski melt growth technique and its detailed mechanical characterization by Vickers microhardness, fracture toughness, crack propagation, brittleness index and yield strength have been reported. The raw material was synthesized by solid state reaction using the stoichiometric ratio of high purity bismuth tri-oxide and silicon di-oxide. The synthesized material was charged in the platinum crucible and then melted. The required rotation and pulling rate was optimized for BSO single crystal growth and good quality single crystal has been harvested after a time span of 5 days. Powder X-ray diffraction analysis confirms the parent crystallization phase of BSO. The experimentally studied mechanical behavior of the crystal is explained using various theoretical models. The anisotropic nature of the crystals is studied using Knoop indentation technique.