Surfactant-mediated epitaxy of thin germanium films on SiGe(001) virtual substrates

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• 作者：J. Schmidt^a ; ^{schmidt@mbe.uni-hannover.de} ; D. Tetzlaff^a ; E. Bugiel^a ; T.F. Wietler^a ; ^b
• 关键词：A1. Surface morphology ; A3. Molecular beam epitaxy ; A3. Surfactant mediated epitaxy ; B1. Germanium silicon alloys ; B2. Strained Ge ; B2. Virtual substrates
• 刊名：Journal of Crystal Growth
• 出版年：2017
• 出版时间：1 January 2017
• 年：2017
• 卷：457
• 期：Complete
• 页码：171-176
• 全文大小：756 K
• 卷排序：457

文摘

Smooth, strained Ge layers were grown on Si(0.21)Ge(0.79) virtual substrates by SME. Fully strained layers up to 10 nm are possible when using Sb as a surfactant. Without the surfactant, we observe the 2D–3D transition below 5 nm.