文摘
The present paper reports that CuInSe2 NW arrays were fabricated through pulsed electrode position onto an AAO template with various duty cycles, and a pore-filling ratio of approximately 92% was achieved. GIXRD patterns showed that all CuInSe2 NW arrays were chalcopyrite and SAED images confirmed that the CuInSe2 NWs were polycrystalline. PEDOT/CuInSe2 NW core–shell arrays were fabricated using surfactant-modified CuInSe2 NW surfaces showing the lotus effect. Current–voltage plots revealed that the CuInSe2 NW arrays were p-type semiconductors; moreover, the core–shell structure improved the diode ideality factor from 3.91 to 2.63.