Near-infrared photocathode In_0.53Ga_0.47As doped with zinc: A first principle study

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• 作者：Jing Guo^a ; ^b ; ^{zdhxgj@njit.edu.cn" class="auth_mail" title="E-mail the corresponding author} ; Benkang Chang^b ; Honggang wang^b ; ^c ; Meishan Wang^c
• 关键词：Near-infrared In0.53Ga0.47As photocathode ; Zinc doping ; Electronic structure
• 刊名：Optik - International Journal for Light and Electron Optics
• 出版年：2016
• 出版时间：February 2016
• 年：2016
• 卷：127
• 期：3
• 页码：1268-1271
• 全文大小：886 K

文摘

In_0.53Ga_0.47As is an important material for the shortwave near-infrared negative electron affinity photocathodes. As we all known, doping is a necessary step for the formation of the negative electron affinity and zinc is a traditional substitutional element to generate the P-type semiconductor. The In_0.53Ga_0.44Zn_0.03As and In_0.50Ga_0.47Zn_0.03As were formed from In_0.53Ga_0.47As by a zinc atom substituting a gallium atom or an indium atom in the article. The atom structures, the band structures and the populations were studied by the first principle method for these two supercell models. Two problems, how the zinc-doping change the characters of intrinsic In_0.53Ga_0.47As and the differences between In_0.53Ga_0.44Zn_0.03As and In_0.50Ga_0.47Zn_0.03As, were solved by the research. Firstly, the atom structures were changed and the band gaps were narrowed after zinc doping. The ionicity was enhanced which is agreed with the character of P-type semiconductor. Secondly, there were small differences between the two supercells in electronic structures. Therefore, there is no need to consider which kind of atom to be substituted during the material growth for the near-infrared InGaAs photocathode.