Massive transfer of vertically aligned Si nanowire array onto alien substrates and their characteristics

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• 作者：Shu-Chia Shiu ; Shih-Che Hung ; Jiun-Jie Chao ; Ching-Fuh Lin
• 关键词：Silicon nanowire ; Transfer ; X-ray diffraction ; Optical absorption
• 刊名：Applied Surface Science
• 出版年：2009
• 出版时间：30 July 2009
• 年：2009
• 卷：255
• 期：20
• 页码：8566-8570
• 全文大小：378 K

文摘

Si nanowires (NWs) are promising materials for future electronic, photovoltaic, and sensor applications. So far the Si NWs are mainly formed on particular substrates or at high temperatures, greatly limiting their application flexibility. Here we report a low temperature process for forming and massively transferring vertically aligned Si NWs on alien substrates with a large density of about (3–5) × 10⁷ NWs/mm². The X-ray diffraction spectrum reveals that the transferred NWs exhibit almost the same crystal property as the bulk Si. Our investigation further shows that the transferred NWs have exceptional optical characteristics. The transferred Si NWs of 12.14 μm exhibit the transmittance as low as 0.3 % in the near infrared region and 0.07 % in the visible region. The extracted absorption coefficient of Si NWs in the near infrared region is about 3 × 10³ cm⁻¹, over 30 times larger than that of the bulk Si. Because of the low temperature process, it enables a large variety of alien substrates such as glass and plastics to be used. In addition, the exceptional properties of the transferred NWs offer potential applications for photovoltaic, photo-detectors, sensors, and flexible electronics.