Post drain-stress behavior of AlGaN/GaN-on-Si MIS-HEMTs

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• 作者：Simon A. Jauss^a ; ^{SimonAlexander.Jauss@de.bosch.com" class="auth_mail" title="E-mail the corresponding author} ; Stefan Kilian^a ; Stephan Schwaiger^a ; Stefan Noll^a ; Walter Daves^a ; Oliver Ambacher^b
• 关键词：GaN ; HEMT ; Trapping ; Stress
• 刊名：Solid State Electronics
• 出版年：2016
• 出版时间：November 2016
• 年：2016
• 卷：125
• 期：Complete
• 页码：125-132
• 全文大小：1164 K

文摘

In this paper we investigate the drain stress behavior and charge trapping phenomena of GaN-based high electron mobility transistors (HEMTs). We fabricated GaN-on-Si MIS-HEMTs with different dielectric stacks in the gate and gate-drain access region and performed interface characterization and stress measurements for slow traps analysis. 2-dimensional TCAD simulations were used to compare the electrical field distributions of the devices in OFF-state stress condition. Our results show a high dependency of the on-resistance increase on interfaces in the gate-drain access region. The dielectric interfaces near the channel play a significant role for long term high voltage stress and regeneration of the device.