Low current writing perpendicular magnetic random access memory with high thermal stability
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- 作者：Min Song ; Yan Xu ; Jun OuYang ; Yue Zhang ; Dongsheng Liu ; Xiaofei Yang ; Xuecheng Zou ; estxczou@hust.edu.cn" class="auth_mail" title="E-mail the corresponding author ; Long You ; lyou@hust.edu.cn" class="auth_mail" title="E-mail the corresponding author
- 关键词：Spin reorientation ; Spin transfer torque ; Perpendicular magnetic random memory ; Co/Ni multilayers ; Composite layers
- 刊名：Materials & Design
- 出版年：2016
- 出版时间：15 February 2016
- 年：2016
- 卷：92
- 期：Complete
- 页码：1046-1051
- 全文大小：1070 K
文摘
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Around 120 °C TSR is found in Co/Ni multilayer, while its Keff is about 3 × 106 erg/cm3.
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The TSR can be adjusted at a wide range for Co/Ni multilayers and composite layers.
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The switching of magnetic tunnel junction with thermal barriers by alternate current is proposed.
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The critical current density Jc, for switching 4 nm nanomagnet with high perpendicular anisotropy, is 2.0 × 106 A/cm2 with 10 ns pulse width using this proposed method.