Low cost oxide-based deposition of Cu₂FeSnS₄ thin films for photovoltaic absorbers

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• 作者：Guilin Chen^a ; ^b ; ¹ ; ^{glchen@fjnu.edu.cn} ; Jianmin Li^c ; ¹ ; Shuiyuan Chen^a ; ^b ; Zhigao Huang^a ; ^b ; Miaoju Wu^a ; ^b ; Jifu Zhao^a ; ^b ; Weihuang Wang^a ; ^b ; Haiqin Lin^a ; ^b ; Changfei Zhu^c ; ^{cfzhu@ustc.edu.cn}
• 关键词：Chalcogenides ; Thin films ; Annealing ; Semiconductors
• 刊名：Materials Chemistry and Physics
• 出版年：2017
• 出版时间：15 February 2017
• 年：2017
• 卷：188
• 期：Complete
• 页码：95-99
• 全文大小：1994 K
• 卷排序：188

文摘

A novel, low cost oxides nanoparticles-based process is introduced to deposit Cu2FeSnS4 thin films. The pure Cu2FeSnS4 films with large grains were obtained by sulfurizing oxides films. The CITS exhibits a band gap of 1.57 eV and obvious photo-electric response.