Tuning the structural properties of InAs nanocrystals grown by molecular beam epitaxy on silicon dioxide

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• 作者：Moï ; ra Hocevar^a ; ^{moira.hocevar@insa-lyon.fr} ; Gilles Patriarche^b ; Abdelkader Souifi^a ; Michel Gendry^c
• 关键词：A1. Nanocrystals ; A1. Desorption ; A1. Diffusion ; A3. Molecular beam epitaxy ; B1. Silicon Dioxide ; B2. Semiconducting III– ; V materials
• 刊名：Journal of Crystal Growth
• 出版年：2011
• 出版时间：15 April 2011
• 年：2011
• 卷：321
• 期：1
• 页码：1-7
• 全文大小：1420 K

文摘

We report on InAs nanocrystals (nc-InAs) grown on silicon dioxide (SiO₂) by solid-source molecular beam epitaxy. We show that the growth parameters influence the properties of the nc-InAs in terms of density, size, and crystallinity. The growth temperature influences mainly the density of the nc-InAs, whereas their size can be controlled by the number of deposited InAs monolayers. Using an adequate set of parameters, we show that the nc-InAs properties are tunable in a range where the crystal structure presents zero defects. These nc-InAs grown on SiO₂ have high crystalline quality, making them perfectly suitable for advanced electronic devices.