Effects of rare earth Eu doping on ferroelectric properties of PbZr_0.52Ti_0.48O₃ thin films by sol–gel methods

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• 作者：Yu ; Y.J. ; Chan ; H.L.W. ; Wang ; F.P. ; Zhao ; L.C.
• 关键词：Ferroelectrics ; Thin films ; Donor dopant ; PZT ; Rayleigh constant
• 刊名：Microelectronic Engineering
• 出版年：2003
• 出版时间：April, 2003
• 年：2003
• 卷：66
• 期：1-4
• 页码：726-732
• 全文大小：211 K

文摘

Samples of (100)-oriented PZT thin films with 0–2 at % rare earth Eu dopant (PEZT) were fabricated on (111)Pt/Ti/SiO₂/Si substrate by a sol–gel method. Ferroelectric properties such as P–V loop, C–V and I–V characteristics were investigated with RT-66A tester and HP4194 impendence analyzer, respectively. Improved polarization (P_r