The ultrafast phase-change memory with high-thermal stability based on SiC-doped antimony

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• 作者：Tianqi Guo^a ; ^b ; ^{guotq@mail.sim.ac.cn} ; Sannian Song^a ; ^{songsannian@mail.sim.ac.cn} ; Le Li^a ; ^b ; Xinglong Ji^a ; ^b ; Chang Li^a ; ^b ; Chang Xu^b ; ^c ; Lanlan Shen^a ; ^b ; Yuan Xue^a ; ^b ; Bo Liu^a ; Zhitang Song^a ; Ming Qi^a ; Songlin Feng^a ; ^c
• 关键词：High speed ; Good stability ; SiC ; Nanocomposite ; Phase transformation
• 刊名：Scripta Materialia
• 出版年：2017
• 出版时间：1 March 2017
• 年：2017
• 卷：129
• 期：Complete
• 页码：56-60
• 全文大小：1319 K
• 卷排序：129

文摘

The contradictory between switching speed and thermal stability has long been a huge challenge for phase-change memory applications. For providing a feasible solution, the rapid-phase-transition material — pure antimony, was incorporated with silicon carbide to complement their advantages. The characterization results elucidate that dopants situated in the grain boundary inhibit the crystal growth and enhance the stability of the temperature-sensitive amorphous state. Convincingly for devices, an ultrafast speed of 7 ns, an operational voltage requirement of only 1.0 V, a high endurance of more than 200 K and a long data retention are all demonstrated to be realizable and repeatable.