Influence of doping on the nanomechanical behavior of InGaP/Ge thin films
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- 作者：Joice Sophia Ponraja ; joice.sophia.ponraj@uist.edu.mk" class="auth_mail" title="E-mail the corresponding author ; Geetha Deivasigamanib ; Matteo Bosic ; Giovanni Attolinic ; Elisa Buffagnic ; Claudio Ferraric
- 关键词：Nanoindentation ; Epitaxy ; Indium gallium phosphide ; Elbow
- 刊名：Materials Letters
- 出版年：2016
- 出版时间：15 May 2016
- 年：2016
- 卷：171
- 期：Complete
- 页码：95-99
- 全文大小：1550 K
文摘
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Deformation mechanisms is detailed by providing reduced modulus and hardness.
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Strong dependence of nanomechanical properties on doping effect is proposed.
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Pile-up/sink-in and kinking significant for improving microscopic surface properties.
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Present study useful in understanding reliability in device fabrication.