Characterization of irradiated test structures for the CMS tracker upgrade

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• 作者：Bernhard Lutzer ; On behalf of the CMS collaboration
• 关键词：Silicon stripsensor ; Test structures ; Irradiation ; CMS ; Tracker
• 刊名：Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
• 出版年：1 December, 2013
• 年：2013
• 卷：730
• 期：Complete
• 页码：204-209
• 全文大小：1438 K

文摘

The CMS collaboration is currently conducting a campaign to identify radiation-hard materials for an upgrade of the CMS tracker. This upgrade is needed to be able to cope with the higher radiation background of the future HL-LHC; additionally the performance of the current tracker will be significantly degraded at the time of the upgrade, requiring a replacement. Several different test structures (TSs) and sensors have been designed for a 6 in. wafer layout. These wafers were produced by an industrial supplier (Hamamatsu Photonics K.K.) and differ by their bulk material (Float Zone, Magnetic Czochralski and CVD-Epi), thickness (from to ) and N-P type doping. These TSs consist of different microelectronic devices including diodes, resistors or MOS structures. They enable the extraction of parameters which are not accessible in a silicon detector and allow the assessment of the quality of the sensors produced on the same wafer. The TSs have been irradiated with protons and neutrons to emulate the radiation damage caused by the particle fluence inside the future CMS tracker after 10 years of operation. This contribution will present measurements of non-irradiated and irradiated test structures at different fluences. The changes of the properties of the microelectronic devices will be discussed as well as the design of the TSs.