Reduction in the short-circuit current density of silicon heterojunction photovoltaic modules subjected to potential-induced degradation tests

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• 作者：Seira Yamaguchi^a ; ^{s-yamaguchi@jaist.ac.jp} ; Chizuko Yamamoto^b ; Keisuke Ohdaira^a ; ^{ohdaira@jaist.ac.jp} ; Atsushi Masuda^b ; ^{atsushi-masuda@aist.go.jp}
• 关键词：Potential-induced degradation ; Silicon heterojunction solar cell ; Photovoltaic module ; Optical loss ; Ionomer encapsulant
• 刊名：Solar Energy Materials and Solar Cells
• 出版年：2017
• 出版时间：March 2017
• 年：2017
• 卷：161
• 期：Complete
• 页码：439-443
• 全文大小：450 K
• 卷排序：161

文摘

SHJ PV modules undergo PID characterized by a reduction in short-circuit current. The reduction is due to optical loss that probably occurs in the front TCO layer. SHJ PV modules have high PID resistance. The high reliability can be further improved by using ionomer encapsulants.