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High performance solar-blind ultraviolet photo detector based on mixed-phase MgZnO thin film with different interfaces deposited by PLD method
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文摘
Mix-phase MgZnO thin films were made with different interface by PLD. The UV response of MgZnO with (200) c-MgZnO/h-MgZnO interface reached 8 A/W. The higher density of interface states in the sample cause the high UV response. The Ilight/Idark of MgZnO with (111) c-MgZnO/h-MgZnO interface is higher.

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