Influence of laser pulse frequency on the microstructure of aluminum nitride thin films synthesized by pulsed laser deposition

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• 作者：K. Antonova^a ; ^{krasa@issp.bas.bg} ; L. Duta^b ; A. Szekeres^a ; G.E. Stan^c ; I.N. Mihailescu^b ; M. Anastasescu^d ; H. Stroescu^d ; M. Gartner^d
• 关键词：Aluminum nitride ; Pulsed laser deposition ; Fourier transform infrared spectroscopy ; Infrared spectroscopic ellipsometry ; Nanocrystallite c-axis orientation ; Berreman effect
• 刊名：Applied Surface Science
• 出版年：2017
• 出版时间：1 February 2017
• 年：2017
• 卷：394
• 期：Complete
• 页码：197-204
• 全文大小：2536 K
• 卷排序：394

文摘

Study of pulsed laser deposited AlN films at different laser pulse frequencies. Higher laser pulse frequency promotes nanocrystallites formation at temperature 450 °C. AFM and GIXRD detect randomly oriented wurtzite AlN structures. Characterization of the nanocrystallites’ orientation by FTIR reflectance spectra. Berreman effect is registered in p-polarised radiation at large incidence angles.