Effect of strain on electronic and magnetic properties of n-type Cr-doped WSe₂ monolayer

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• 作者：Xiaomeng Liu ; Xu Zhao ; ^{zhaoxu@htu.cn} ; Xu Ma ; Ninghua Wu ; Qianqian Xin ; Tianxing Wang ^{txwang@htu.cn}
• 关键词：WSe2 monolayer ; Transition-metal dichalcogenides ; First&ndash ; principles calculations ; Strain
• 刊名：Physica E: Low-dimensional Systems and Nanostructures
• 出版年：2017
• 出版时间：March 2017
• 年：2017
• 卷：87
• 期：Complete
• 页码：6-9
• 全文大小：947 K
• 卷排序：87

文摘

Cr does not induce magnetism in the WSe2 monolayer at 0% strain. The doped system shows n-type doping semiconductor feature without strain. Effect of strain on magnetic properties is inappreciable in Cr-doped WSe2. Tensile strain is more effective in reducing the band gap of the doped system.