Influence of substrate temperature on electrical and optical properties of p-type semitransparent conductive nickel oxide thin films deposited by radio frequency sputtering

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• 作者：Lei Ai ; Guojia Fang ; Longyan Yuan ; Nishuang Liu ; Mingjun Wang ; Chun Li ; Qilin Zhang ; Jun Li ; Xingzhong Zhao
• 关键词：Nickel oxide ; p-Type ; RF sputtering ; Heterojunction
• 刊名：Applied Surface Science
• 出版年：2008
• 出版时间：15 February 2008
• 年：2008
• 卷：254
• 期：8
• 页码：2401-2405
• 全文大小：314 K

文摘

Nickel oxide thin films were deposited on fused silica and Si(1 0 0) substrates at different substrate temperatures ranging from room temperature to 400 °C using radio frequency reactive magnetron sputtering from a Ni metal target in a mixture of O₂ and Ar. With the increase of substrate temperature, nickel oxide films deposited on the Si substrates exhibit transition from amorphous to poly-crystalline structures with different preferred orientations of NiO(2 0 0) and (1 1 1). The films deposited at higher temperature exhibit higher Ni²⁺/Ni³⁺ ratio. With substrate temperature increasing from room temperature to 400 °C, the electrical resistivities of nickel oxide films increase from (2.8 ± 0.1) × 10⁻² to (8.7 ± 0.1) Ω cm, and the optical band-gap energies increase from 3.65 to 3.88 eV. A p-nickel oxide/n-zinc oxide heterojunction was fabricated to confirm the p-type conduction of nickel oxide thin film, which exhibited a steadily rectifying behavior.