High mobility multibit nonvolatile memory elements based organic field effect transistors with large hysteresis
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- 作者：Yong Zhanga ; yongzhang@hit.edu.cn" class="auth_mail" title="E-mail the corresponding author ; Caili Langa ; Jingze Fana ; Lei Shib ; Yuanping Yic ; Qingjiang Yua ; Fengyun Guoa ; Jinzhong Wanga ; Liancheng Zhaoa
- 关键词：Multibit nonvolatile memory ; Polyquinoline ; Organic field effect transistor
- 刊名：Organic Electronics
- 出版年：2016
- 出版时间：August 2016
- 年：2016
- 卷：35
- 期：Complete
- 页码：53-58
- 全文大小：1073 K
文摘
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Multibit nonvolatile memory elements with the polyquinoline dielectric layer was demonstrated.
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The hole mobility of as high as 1.5 cm2 V−1 s−1 was achieved.
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The memory elements have good stability and long retention time with low operation voltage.
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