Effects of annealing treatment on the formation of CO₂ in ZnO thin films grown by metal-organic chemical vapor deposition

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• 作者：Gaolin Zheng ; Anli Yang ; Hongyuan Wei ; Xianglin Liu ; Huaping Song ; Yan Guo ; Caihong Jia ; Chunmei Jiao ; Shaoyan Yang ; Qinsheng Zhu ; Zhanguo Wang
• 关键词：ZnO ; Metal-organic chemical vapor deposition ; Infrared absorption ; Surface
• 刊名：Applied Surface Science
• 出版年：2010
• 出版时间：1 February 2010
• 年：2010
• 卷：256
• 期：8
• 页码：2606-2610
• 全文大小：689 K

文摘

Post-growth annealing was carried out on ZnO thin films grown by metal-organic chemical vapor deposition (MOCVD). The grain size of ZnO thin film increases monotonically with annealing temperature. The ZnO thin films were preferential to c-axis oriented after annealing as confirmed by X-ray diffraction (XRD) measurements. Fourier transformation infrared transmission measurements showed that ZnO films grown at low temperature contains CO₂ molecules after post-growth annealing. A two-step reaction process has been proposed to explain the formation mechanism of CO₂, which indicates the possible chemical reaction processes during the metal-organic chemical vapor deposition of ZnO films.