Performance improvement of amorphous silicon germanium single junction solar cell modules by low temperature annealing

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• 作者：G.H. Wang ; C.Y. Shi ; L. Zhao ; R.D. Hu ; L.L. Li ; G. Wang ; J.W. Chen ; H.W. Diao ; W.J. Wang
• 关键词：Annealing ; Plasma-enhanced chemical vapor deposition ; Amorphous silicon germanium ; Solar cell modules
• 刊名：Thin Solid Films
• 出版年：3 February, 2014
• 年：2014
• 卷：552
• 期：Complete
• 页码：180-183
• 全文大小：640 K

文摘

The performances of p-i-n amorphous silicon germanium (a-SiGe:H) solar cell modules were investigated post annealing at different temperatures. When the annealing temperature is 190 掳C, the best performance of solar cell modules is obtained. The efficiency of solar cell modules is improved from 5.11% to 7.91%. The enhancement in quantum efficiency spectra at long wavelength post annealing may be attributable to there being significantly less absorption in intrinsic layer. The microstructural properties of the a-SiGe:H thin films are investigated post annealing at different temperatures. The results show that the low temperature annealing process leads to the improvement in the film microstructure.