Modeling and simulation of InAs/GaAs quantum dots for solar cell applications

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• 作者：A. Benahmed^a ; A. Aissat^a ; ^{sakre23@yahoo.fr" class="auth_mail" title="E-mail the corresponding author} ; A. Benkouider^b ; Jean Pierre Vilcot^c
• 关键词：New materials ; Quantum dots ; InAs/GaAs ; Solar cell
• 刊名：Optik - International Journal for Light and Electron Optics
• 出版年：2016
• 出版时间：April 2016
• 年：2016
• 卷：127
• 期：7
• 页码：3531-3534
• 全文大小：820 K

文摘

This paper proposes a method of modeling and simulation of InAs/GaAs-based quantum dots (QDs) for solar cell. The main objective is to find the growth parameters in order to produce an optimal double heterostructure using two semiconductor materials InAs and GaAs. We are interested in particular on the impact of the growth control parameters on the physical properties of the two-dimensional InAs mono-layer. We report here a complete but non-exhaustive analysis of the electronic states of the InAs based QDs layers grown on a GaAs substrate. In this work, the reader will find the modeling and the simulation results for both rectangular and elliptical geometries of InAs QDs. In the first part of this work, we provided the change of the electronic transition energy as a function of quantum dots’ radius whilst the second one concerns the absorption coefficient as a function of the incident photon wavelength. The curves we have obtained indicate clearly that the geometrical shape of the InAs QDs does significantly modify the various parameters above. We could therefore confirm that the more appropriate geometry is the elliptical one because of the higher performances.