Influence of thin AlAs layer insertion on intersubband optical transitions in GaAs/AlGaAs quantum- well structures

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• 作者：Dongfeng Liu^a ; ^{liudf@gdut.edu.cn} ; Everett X. Wang^a ; Kangxian Guo^b
• 刊名：Physica E: Low-dimensional Systems and Nanostructures
• 出版年：2017
• 出版时间：February 2017
• 年：2017
• 卷：86
• 期：Complete
• 页码：64-67
• 全文大小：435 K
• 卷排序：86

文摘

The effect of AlAs layer insertion into quantum well (QW) structures on intersubband absorption has been discussed. We find that the thicker AlAs layer can provide wider tuning range and larger oscillator strength. A thin AlAs layer may be an idea optimization design for the quantum well terahertz lasers.